The matter of the future: Materials driving the compute revolution

Materials innovations are emerging as critical enablers for continued system performance as conventional dimensional scaling slows down. Novel patterning materials offer favourable dose-to-size ratios, supporting pitch scaling with optimized EUV exposure. Two-dimensional semiconductors present promising alternatives to silicon channels—both for next-generation scaled logic transistors and for BEOL-compatible power switches on the wafer back side. Novel metals capable of maintaining low resistivity at reduced dimensions provide a path forward for BEOL RC scaling. As SRAM scaling plateaus, wide bandgap deposited semiconductors offer opportunities for dense embedded memories to meet the escalating capacity demands of AI workloads. Energy efficiency in data communication also demands scaling 2.5D and 3D interconnect pitches with materials innovations. Thermal power density from scaling is exacerbated by elimination of silicon substate for back-side power delivery and stacking of chips in 3D.  Addressing these requires integration of novel high–thermal-conductivity materials to enhance heat spreading at multiple levels of the system. The deceleration of traditional dimensional scaling has, in effect, accelerated materials innovation—positioning new materials as central to overcoming the fundamental challenges of future compute system scaling.