Materials, devices, and system integration – Tackling the challenges of next-gen connectivity

As wireless communication evolves toward 5G Advanced and 6G, the FR3 spectrum (6–24 GHz) presents new challenges and opportunities for both infrastructure and handset applications. This presentation will delve into the transformative potential of GaN-on-Silicon (GaN-Si) technology, highlighting its unique ability to combine the superior electronic properties of GaN with the scalability and cost advantages of silicon substrates. GaN-Si is poised to redefine RF performance in base stations and handsets, offering a promising pathway to cost-effective, high-efficiency solutions, despite ongoing challenges in thermal management, reliability, and low-voltage E-mode operation.

In parallel, heterogeneous integration techniques, inspired by advancements in 2.5D and 3D technologies, are emerging as key enablers for compact, high-performance RF front-end modules. These approaches, including imec’s RF interposer platform, offer new opportunities to optimize signal integrity, energy efficiency, and form factors at increasingly higher frequencies.

This talk will provide a comprehensive overview of the latest innovations in GaN-Si technology and heterogeneous integration, exploring their combined potential to meet the demands of next-generation wireless systems while addressing critical technical and sustainability challenges.