Gouri Sankar Kar

Gouri Sankar Kar earned his Ph.D. in Semiconductor Device Physics from the Indian Institute of Technology (IIT) Kharagpur, India, in 2002. Following his doctoral studies, he served as a Visiting Scientist from 2002 to 2005 in the research group of Nobel Laureate Prof. Klaus von Klitzing at the Max Planck Institute for Solid State Research in Stuttgart, Germany.

In 2006, Dr. Kar joined Infineon Technologies/Qimonda in Dresden, Germany, as a Lead Device Engineer, where he played a key role in the development of vertical transistor technologies for 4F² DRAM applications.

In 2009, he joined imec in Leuven, Belgium, and was appointed Program Director for MRAM and Emerging Memory Technologies in 2014. Dr. Kar currently serves as Vice President of R&D for Compute and Memory Device Technologies at imec, leading advanced research and development programs in next-generation logic and memory technologies. His expertise spans a broad spectrum of semiconductor device innovations, including nanosheet FETs (NSFETs), 2D channel transistors, MRAM, ReRAM, PCM, OTS selectors, eDRAM, and DRAM technologies.

A recognized leader in the semiconductor research community, Dr. Kar has authored or co-authored more than 500 scientific publications in peer-reviewed journals and conference proceedings and holds over 30 patents, reflecting his significant contributions to the advancement of compute and memory technologies.