Geoffrey Pourtois

Geoffrey Pourtois joined imec in 2003 and has since worked in atomistic modeling, focusing on the relationships between material, interface defects, and electrical device performance. He received a Ph.D. degree in Chemistry in 2002 from the University of Mons Hainaut, Belgium. Since 2003, he has led the material simulation and physics group at imec, concentrating on atomistic simulations of nanoelectronic materials and complex material gate stacks. His work includes identifying new metal candidates for interconnects, emerging and magnetic memories; studying 2D materials; developing doping strategies for transistors; engineering CMOS metal gate work functions; identifying transparent amorphous semiconductors and materials with ovonic threshold switch characteristics; modeling mechanical and thermal properties; and identifying atomic layer deposition precursors for material growth. In 2020, he was appointed as an imec fellow.