Hithiksha Krishna Murthy

Hithiksha Krishna Murthy is a PhD student specializing in vertical GaN power FETs, with a research focus on device physics and performance optimization for high-voltage applications. She holds a Master’s degree in Electrical Engineering from KTH Royal Institute of Technology, Sweden, and has  experience in wide-bandgap semiconductor technologies. Her work aims to advance the efficiency and scalability of GaN-based power electronics for future energy and industrial systems.