Jérôme Mitard

Jérôme Mitard received his Ph.D. in Microelectronic Engineering from the Grenoble Institute of Technology (INPG) in 2003. He spent three years at CEA-LETI as an assignee at STMicroelectronics, working on the qualification of hafnium-based dielectric gate stacks for sub-45 nm CMOS transistors.

He later joined imec in Leuven as a device researcher, contributing to the development of high-mobility germanium channel technologies across multiple platforms, from planar transistors to FinFET and gate-all-around (GAA) architectures. He also actively contributed to the transfer of IGZO-based channel transistors from functional BEOL integration toward DRAM applications.

He has since progressed into leadership roles at imec, first leading compute device research and currently serving as an R&D Group Manager, overseeing activities spanning compute technologies, technology transfer, and quantum devices.